Journal of Physics Research and Education, Vol. 02

Permanent URI for this collectionhttps://ir.nbu.ac.in/handle/123456789/5172

EDITORIAL NOTE

We are happy to bring out this second volume of the Departmental journal, Journal of Physics Research and Education. We apologize for the inordinate delay in bringing out this volume. We aim to publish a new volume regularly in every year. The goal of JPRE is to have an amalgamating impact for the diversity of the fields of physics research and physics education. The current volume has a distinctive aspect of this nature contributed together by Ph.D. scholars, Post doctoral scholars and Professors. I hope this volume will reflect the current state of interdisciplinary research, insightful reviews and will indicate the usefulness of their material to physics education.

Rajat K. Dey
Editor-in-Chief

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    Variable thermoelectric parameters in Si / Ge zNR by electrostrictive application of localized strain
    (University of North Bengal, 2024-03) Sengupta, Amretashis
    In this work, we propose the tuning of thermoelectric performance of zigzag monolayer Silicene and Germanene nanoribbon (SiNR/GeNR) with a reversible strain engineering method. By a proposed electrostrictive method a tensile or compressive moderate strain of ±2% orthogonal to the transport direction in a short region of the SiNR or GeNR is considered to be applied. A selfconsistent density functional tight binding (DFTB) approach is employed for the calculation of the electronic properties of the system, while the vibrational properties are computed with classical molecular dynamics simulations. Electron/phonon transport is computed with the Green’s function formalism. With the localized strain application it is observed that electron transmission and current through the Si or GeNR remains largely unaffected while a suppression of the phonon transport and thermal conductance can be achieved. A significant tuning is observed for thermoelectric figure of merit and variations are seen in the Seebeck coefficient and the thermoelectric power factor. Moreover the temperature and doping dependencies of these parameters also showed high degree of tunability with strain. The enhancements in thermoelectric figure of merit by such simple strain ON/OFF mechanism in a CMOS compatible architecture suggest good prospects for nanoscale thermoelectrics.